SS2H9_08 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High-Voltage Surface Mount Schottky Rectifier

SS2H9 & SS2H10
Vishay General Semiconductor
High-Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
DO-214AA (SMB)
FEATURES
• Low profile package
• Guardring for overvoltage protection
• Ideal for automated placement
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
I_R
T_J max.
2.0 A
90 V, 100 V
75 A
0.65 V
10 µA
175 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at: T_L = 130 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
Peak repetitive reverse surge current at t_p = 2.0 µs, 1 kHz
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
I_RRM
dV/dt
T_J, T_STG
SS2H9
MS9
90
90
90
SS2H10
MS10
100
100
100
2.0
75
1.0
10 000
- 65 to + 175
UNIT
V
V
V
A
A
A
V/µs
°C
Document Number: 88750 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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