SS2H9 Datasheet, PDF (1/3 Pages) Vishay Siliconix – High-Voltage Surface Mount Schottky Rectifier

SS2H9 & SS2H10
Vishay Semiconductors
High-Voltage Surface Mount Schottky Rectifier
High Barrier Tecnology for improved high
temperature performance
Major Ratings and Characteristics
I_F(AV)
V_RRM
I_FSM
V_F
I_R
T_j max.
2.0 A
90 V, 100 V
75 A
0.65 V
10 µA
175 °C
Features
• Low profile package
• Guardring for overvoltage protection
• Ideal for automated placement
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
w applications
e _{Maximum Ratings}
N ^{TA = 25 °C unless otherwise specified#}
Parameter
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at: T_L = 130 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t_p = 2.0 µs, 1 KHz
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
DO-214AA (SMB)
t ^{Mechanical Data}
Case: DO-214AA (SMB)
c _{Epoxy meets UL 94V-0 Flammability rating}
Terminals: Matte tin plated leads, solderable per J-
u _{STD-002B and JESD22-B102D}
E3 suffix for commercial grade, HE3 suffix for high
d reliability grade (AEC Q101 qualified)
Pro ^{Polarity: Color band denotes the cathode end}
Symbol
V_RRM
V_RWM
V_DC
I_F(AV)
I_FSM
I_RRM
dv/dt
T_J, T_STG
SS2H9
MS9
90
90
90
SS2H10
MS10
100
100
100
2.0
75
1.0
10000
- 65 to + 175
Unit
V
V
V
A
A
A
V/µs
°C
Document Number 88750
28-Jun-05
www.vishay.com
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