SS2FL3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Surface Mount Schottky Barrier Rectifier

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SS2FL3
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
eSMP^® Series
Top view
Bottom view
DO-219AB (SMF)
PRIMARY CHARACTERISTICS
I_F(AV)
2.0 A
V_RRM
30 V
I_FSM
V_F at I_F = 2.0 A (T_A = 125 °C)
T_J max.
50 A
0.37 V
150 °C
Package
DO-219AB (SMF)
Diode variations
Single die
FEATURES
• Low profile package
Available
• Ideal for automated placement
• Low forward voltage drop, low power losses
• Low leakage current
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Wave and reflow solderable
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection in commercial, industrial,
and automotive applications.
MECHANICAL DATA
Case: DO-219AB (SMF)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Non-repetitive peak forward surge current 8.3 ms single half
sine-wave at T_{J (init)} = 25 °C
Operating junction and storage temperature range
V_RRM
I_F(AV) ⁽¹⁾
I_FSM
T_J, T_STG
Note
(1) _{Free air, mounted on recommended copper pad area}
SS2FL3
2L3
30
2.0
50
-55 to +150
UNIT
V
A
A
°C
Revision: 01-Sep-16
1
Document Number: 87615
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000