SS1P3L Datasheet, PDF (1/4 Pages) Vishay Siliconix – Low VF High Current Density Surface Mount Schottky Barrier Rectifiers

SS1P3L & SS1P4L
New Product _{Vishay General Semiconductor}
Low V_F High Current Density Surface Mount
Schottky Barrier Rectifiers
DO-220AA (SMP)
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MAJOR RATINGS AND CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
E_AS
V_F
T_j max.
1A
30 V, 40 V
50 A
11.25 mJ
0.35 V, 0.38 V
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Device marking code
Maximum repetive peak reverse voltage
Maximum average forward rectified current see Fig. 1
T_L = 140 °C
T_L = 135 °C
V_RRM
I_F(AV)
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
I_FSM
Non-repetitive avalanche energy at I_AS = 1.5 A, L = 10 mH, T_J = 25 °C
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
E_AS
dv/dt
T_J, T_STG
SS1P3L
13L
SS1P4L
14L
30
40
1.0
1.5
50
11.25
10000
- 55 to + 150
UNIT
V
A
A
mJ
V/µs
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
SS1P3L
Maximum instantaneous forward voltage ⁽¹⁾
at I_F = 1.0 A, T_J = 25 °C
at I_F = 1.0 A, T_J = 125 °C
V_F
0.45
0.35
Maximum reverse current at rated V_R ⁽¹⁾
T_J = 25 °C
T_J = 125 °C
I_R
200
20
Typical junction capacitance
at 4.0 V, 1 MHz
C_J
110
SS1P4L
0.48
0.38
150
15
130
UNIT
V
µA
mA
pF
Document Number 88915
07-Feb-06
www.vishay.com
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