SS1P3-M3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Surface Mount Schottky Barrier Rectifiers

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SS1P3, SS1P4
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
eSMP ^® Series
DO-220AA (SMP)
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
E_AS
V_F
T_J max.
1.0 A
30 V, 40 V
30 A
10 mJ
0.40 V, 0.45 V
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
Note
• These devices are not AEC-Q101 qualified
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
V_RRM
I_F(AV)
I_FSM
Non-repetitive avalanche energy at T_J = 25 °C, I_AS = 1.5 A, L = 10 mH
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
E_AS
dV/dt
T_J, T_STG
SS1P3
SS1P4
13
14
30
40
1.0
30
10
10 000
- 55 to + 150
UNIT
V
A
A
mJ
V/μs
°C
Revision: 25-Jun-12
1
Document Number: 88935
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000