SS12P4C Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Surface Mount Schottky Barrier Rectifier

New Product
SS12P4C
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifier
eSMP ^TM Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal impedance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 6.0 A
V_RRM
40 V
I_FSM
150 A
E_AS
20 mJ
V_F at I_F = 6.0 A
0.40 V
T_J max.
125 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1) ⁽¹⁾
total device
per diode
V_RRM
I_F(AV)
Maximum average forward rectified current ⁽²⁾
total device
I_F(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Non-repetitive avalanche energy
at T_J = 25 °C, L = 60 mH per diode
E_AS
Peak repetitive reverse current at t_p = 2 µs, 1 kHz,
at T_J = 25 °C per diode
I_RRM
Operating junction and storage temperature range
T_J, T_STG
Notes
(1) _{Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink}
(2) _{Free air, mounted on recommended copper pad area}
SS12P4C
S124C
40
12
6.0
3.5
150
20
1.0
- 55 to + 125
UNIT
V
A
A
A
mJ
A
°C
Document Number: 89141 For technical questions within your region, please contact one of the following:
Revision: 13-May-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000