SS12-M3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Ideal for automated placement

SS12-M3, SS13-M3, SS14-M3, SS15-M3, SS16-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
1.0 A
20 V, 30 V, 40 V, 50 V, 60 V
40 A
V_F
0.50 V, 0.75 V
T_J max.
Package
150 °C
DO-214AC (SMA)
Diode variations
Single die
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL SS12
Device marking code
S2
Maximum repetitive peak reverse voltage
V_RRM
20
Maximum RMS voltage
V_RMS
14
Maximum DC blocking voltage
V_DC
20
Maximum average forward rectified current at T_L (fig. 1)
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
Voltage rate of change (rated V_R)
dV/dt
Operating junction temperature range
T_J
Storage temperature range
T_STG
SS13
S3
30
21
30
SS14
S4
40
28
40
1.0
SS15
S5
50
35
50
40
10 000
-65 to +150
-65 to +150
SS16
S6
60
42
60
UNIT
V
V
V
V
A
A
V/μs
°C
°C
Revision: 04-Aug-15
1
Document Number: 89406
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000