SS10PH9 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Surface Mount High-Voltage Schottky Rectifier

Preliminary
SS10PH9 & SS10PH10
Vishay General Semiconductor
High Current Density Surface Mount
High-Voltage Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.1 mm
K
• Ideal for automated placement
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• Guardring for overvoltage protection
• High Barrier Technology, T_j = 175 °C Maximum
• Low leakage current
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MAJOR RATINGS AND CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
E_AS
V_F at I_F = 10 A
I_R
T_j max.
10 A
90 V, 100 V
200 A
20 mJ
0.661 V
0.3 µA
175 °C
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, free-wheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-277A (SMPC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Non-repetitive avalanche energy
at I_AS = 2 A, L = 10 mH, T_j = 25 °C
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
E_AS
dv/dt
T_J, T_STG
SS10PH9
10H9
90
SS10PH10
10H10
100
10
200
20
10000
- 55 to + 175
UNIT
V
A
A
mJ
V/µs
°C
Document Number 89000
24-Jul-06
www.vishay.com
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