SS10PH10_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Voltage Schottky Rectifiers

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SS10PH9, SS10PH10
Vishay General Semiconductor
High Current Density Surface Mount
High Voltage Schottky Rectifiers
eSMP ^® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
I_F(AV)
10 A
V_RRM
90 V, 100 V
I_FSM
E_AS
V_F at I_F = 10 A
200 A
20 mJ
0.661 V
I_R
0.3 μA
T_J max.
Package
175 °C
TO-277A (SMPC)
Diode variations
Single die
FEATURES
• Power pack
Available
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• High barrier technology, T_J = 175 °C maximum
• Low leakage current
• Meets MSL level 1, per J-STD-020
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave 
superimposed on rated load
Non-repetitive avalanche energy
at I_AS = 2.0 A, T_J = 25 °C
Operating junction and storage temperature range
V_RRM
I_F(AV)
I_FSM
E_AS
T_J, T_STG
SS10PH9
10H9
90
SS10PH10
10H10
100
10
200
20
-55 to +175
UNIT
V
A
A
mJ
°C
Revision: 06-Nov-13
1
Document Number: 89000
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