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SS10P6_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Barrier Rectifier
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SS10P5, SS10P6
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifier
eSMP ® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
EAS
VF at IF = 10 A
TJ max.
Package
10 A
50 V, 60 V
280 A
20 mJ
0.55 V
150 °C
TO-277A (SMPC)
Diode variations
Single
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling
diodes, DC/DC converters, and polarity protection
application.
FEATURES
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Guardring for overvoltage protection
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test


MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
Peak forward surge current 10 ms single half sine-wave 
superimposed on rated load
Non-repetitive avalanche energy at IAS = 2 A , TJ = 25 °C
Operating junction and storage temperature range
Notes
(1) Units mounted on infinite heatsink
(2) Units mounted on 5 cm x 5 cm, 2 oz. copper pad
IFSM
EAS
TJ, TSTG
SS10P5
S105
50
10 (1)
7 (2)
SS10P6
S106
60
280
20
- 55 to + 150
UNIT
V
A
A
mJ
°C
Revision: 02-Aug-13
1
Document Number: 89043
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000