SS10P4C_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Barrier Rectifiers

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SS10P3C, SS10P4C
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
eSMP ^® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
E_AS
V_F at I_F = 5 A
T_J max.
Package
2 x 5.0 A
30 V, 40 V
200 A
20 mJ
0.37 V
150 °C
TO-277A
Diode variations
Single
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling
diodes, DC/DC converters, and polarity protection
application.
FEATURES
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test




MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
total device
per diode
Peak forward surge current 10 ms single half sine-wave 
superimposed on rated load
Non-repetitive avalanche energy at 25 °C, I_AS = 2 A per diode
Operating junction and storage temperature range
SYMBOL
V_RRM
I_F(AV)
I_FSM
E_AS
T_J, T_STG
SS10P3C
SS10P4C
S103C
S104C
30
40
10
5.0
200
20
-55 to +150
UNIT
V
A
A
mJ
°C
Revision: 17-Jan-14
1
Document Number: 89035
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000