SS10P3CL_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual Common Cathode Schottky Rectifiers

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SS10P2CL, SS10P3CL
Vishay General Semiconductor
High Current Density Surface Mount
Dual Common Cathode Schottky Rectifiers
eSMP ^® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 5.0 A
V_RRM
I_FSM
E_AS
20 V, 30 V
200 A
20 mJ
V_F at I_F = 5 A
0.338 V
T_J max.
Package
150 °C
TO-277A (SMPC)
Diode variations
Dual Common Cathode
FEATURES
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
total device
per diode
Peak forward surge current 10 ms single half sine-wave 
superimposed on rated load
Non-repetitive avalanche energy at 25 °C, I_AS = 2 A per diode
Operating junction and storage temperature range
SYMBOL
V_RRM
I_F(AV)
I_FSM
E_AS
T_J, T_STG
SS10P2CL SS10P3CL
S102CL
S103CL
20
30
10
5.0
200
20
- 55 to + 150
UNIT
V
A
A
mJ
°C
Revision: 14-Aug-13
1
Document Number: 89036
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000