SQV120N10-3M8_15 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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SQV120N10-3m8
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 10 V
I_D (A)
Configuration
TO-262
100
0.0038
120
Single
D
FEATURES
• TrenchFET^® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified^d
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
1 23
G
Top View
S
G DS
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
N-Channel MOSFET
TO-262
SQV120N10-3m8-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C^a
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)^a
I_S
Pulsed Drain Current^b
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^b
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
100
± 20
120
102
120
480
73
266
250
83
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount^c
SYMBOL
R_thJA
R_thJC
LIMIT
40
0.6
UNIT
°C/W
S13-1433-Rev. A, 01-Jul-13
1
Document Number: 63402
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000