SQS405ENW_15 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Automotive P-Channel 12 V (D-S) 175 °C MOSFET

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SQS405ENW
Vishay Siliconix
Automotive P-Channel 12 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = -4.5 V
R_DS(on) (Ω) at V_GS = -2.5 V
I_D (A)
Configuration
-12
0.020
0.026
-16
Single
PowerPAK^® 1212-8 Single
D
D8
D7
D6
5
FEATURES
• TrenchFET^® power MOSFET
• AEC-Q101 qualified ^d
• 100 % R_g and UIS tested
• Wettable flank terminals
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
3.3 _mm
1
Top View
3.3 ^mm
Marking Code: Q022
1
2_S
3_S
4_S
G
Bottom View
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK 1212-8
SQS405ENW-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
Continuous Source Current (Diode Conduction) ^a
Pulsed Drain Current ^b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation ^b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) ^{e, f}
T_C = 25 °C
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
-12
±8
-16
-16
-16
-64
-19
18
39
13
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount ^c
R_thJA
81
R_thJC
3.8
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
UNIT
°C/W
S15-0545-Rev. A, 18-Mar-15
1
Document Number: 62984
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000