SQR97N06-6M3L_15 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Automotive N-Channel 60 V (D-S) 175 °C MOSFET

www.vishay.com
SQR97N06-6m3L
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 10 V
R_DS(on) (Ω) at V_GS = 4.5 V
I_D (A)
Configuration
Package
60
0.0063
0.0069
97
Single
TO-252 Reverse Lead DPAK
FEATURES
• TrenchFET^® power MOSFET
• Package with low thermal resistance
• 100 % R_g and UIS tested
• AEC-Q101 qualified ^d
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
TO-252 Reverse Lead DPAK
S
G
D
Drain connected
to tab
D
G
Top View
S
Bottom View
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction) ^a
I_S
Pulsed Drain Current ^b
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation ^b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
60
± 20
97
56
100
290
45
101
136
45
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PCB Mount ^c
SYMBOL
R_thJA
R_thJC
LIMIT
50
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-2257-Rev. A, 22-Sep-15
1
Document Number: 66607
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000