SQR70090ELR Datasheet, PDF (1/7 Pages) Vishay Siliconix – Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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SQR70090ELR
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
TO-252 Reverse Lead DPAK
Unplated
1 mm max.
1 mm max.
Top View
S
D
Drain connected to tab.
G The drain tab (heatsink) is
unplated (at least 80 % of area).
G
D
S
Bottom View
FEATURES
• TrenchFET^® power MOSFET
• Unplated drain tab (heatsink)
• Package with low thermal resistance
• AEC-Q101 qualified
• 100 % R_g and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
D
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 10 V
R_DS(on) () at V_GS = 4.5 V
I_D (A)
Configuration
Package
100
0.0087
0.0106
86
Single
TO-252 Reverse Lead DPAK
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
I_D
T_C = 125 °C
Continuous Source Current (Diode conduction) ^a
I_S
Pulsed Drain Current ^b
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I_AS
L = 0.1 mH
E_AS
Maximum Power Dissipation ^b
T_C = 25 °C
P_D
T_C = 125 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
100
± 20
86
50
100
150
45
101
136
45
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB mount ^c
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).
SYMBOL
R_thJA
R_thJC
LIMIT
50
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S16-1763-Rev. A, 05-Sep-16
1
Document Number: 75462
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000