SQR40N10-25_15 Datasheet, PDF (1/10 Pages) Vishay Siliconix – Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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SQR40N10-25
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 10 V
R_DS(on) (Ω) at V_GS = 4.5 V
I_D (A)
Configuration
Package
100
0.025
0.029
40
Single
TO-252 Reverse Lead
DPAK
TO-252 Reverse Lead DPAK
FEATURES
• TrenchFET^® power MOSFET
• Package with low thermal resistance
• 100 % R_g and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
S
G
D
Drain connected
to tab
D
G
Top View
S
Bottom View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) ^a
Pulsed Drain Current ^b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation ^b
Operating Junction and Storage Temperature Range
T_C = 25 °C ^a
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
100
± 20
40
26
40
160
40
80
136
45
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
PCB Mount ^c
SYMBOL
R_thJA
R_thJC
LIMIT
50
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1873-Rev. F, 10-Aug-15
1
Document Number: 69060
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000