SQM40031EL Datasheet, PDF (1/6 Pages) Vishay Siliconix – Automotive P-Channel 40 V (D-S) 175 °C MOSFET

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SQM40031EL
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
TO-263
S
G
Top View
S
D
G
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = -10 V
R_DS(on) () at V_GS = -4.5 V
I_D (A)
Configuration
Package
D
P-Channel MOSFET
-40
0.00300
0.00380
-120
Single
TO-263
FEATURES
• TrenchFET^® power MOSFET
• Package with low thermal resistance
• 100 % R_g and UIS tested
• AEC-Q101 qualified
• Material categorization: 
for definitions of compliance please see
www.vishay.com/doc?99912








ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
Continuous Source Current (Diode conduction) ^a
T_C = 25 °C
T_C = 125 °C
Pulsed Drain Current ^b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation ^b
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
-40
± 20
-120
-120
-120
-300
-60
180
375
125
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).
PCB mount ^c
SYMBOL
R_thJA
R_thJC
LIMIT
40
0.4
UNIT
°C/W
S17-0071-Rev. A, 23-Jan-17
1
Document Number: 70297
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000