SQD50P04-13L_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive P-Channel 40 V (D-S) 175 °C MOSFET

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SQD50P04-13L
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = -10 V
R_DS(on) () at V_GS = -4.5 V
I_D (A)
Configuration
-40
0.013
0.022
-50
Single
TO-252
Drain connected to tab
FEATURES
• TrenchFET^® power MOSFET
• Package with low thermal resistance
• 100 % R_g and UIS tested
• AEC-Q101 qualified ^d
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
G
S
D
G
Top View
P-Channel MOSFET
D
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-252
SQD50P04-13L-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) ^a
Pulsed Drain Current ^b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation ^b
Operating Junction and Storage Temperature Range
T_C = 25 °C ^a
T_C = 125 °C
L = 0.1 mH
T_A = 25 °C
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
-40
± 20
-50
-39
-50
-200
-40
80
3
136
45
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PCB Mount ^c
SYMBOL
R_thJA
R_thJC
LIMIT
50
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S14-2536-Rev. D, 29-Dec-14
1
Document Number: 65157
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000