SQD30N05-20L_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive N-Channel 55 V (D-S) 175 °C MOSFET

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SQD30N05-20L
Vishay Siliconix
Automotive N-Channel 55 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 10 V
R_DS(on) (Ω) at V_GS = 4.5 V
I_D (A)
Configuration
Package
55
0.020
0.026
30
Single
TO-252
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g and UIS tested
• AEC-Q101 qualified ^d
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
TO-252
Drain connected to tab
G
S
D
G
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C ^a
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction) ^a
I_S
Pulsed Drain Current ^b
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation ^b
T_C = 25 °C
T_C = 125 °C
Operating Junction and Storage Temperature Range
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
55
± 20
30
19
30
120
20
20
50
16
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount ^c
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
SYMBOL
R_thJA
R_thJC
LIMIT
60
3
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1873-Rev. D, 10-Aug-15
1
Document Number: 67054
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000