SQD25N15-52 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive N-Channel 150 V (D-S) 175 °C MOSFET

www.vishay.com
SQD25N15-52
Vishay Siliconix
Automotive N-Channel 150 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 10 V
I_D (A)
Configuration
Package
150
0.052
25
Single
TO-252
TO-252
Drain connected to tab
FEATURES
• TrenchFET^® power MOSFET
• Package with low thermal resistance
• 100 % R_g and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
S
D
G
Top View
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) ^a
T_C = 25 °C
T_C = 125 °C
Pulsed Drain Current ^b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation ^b
T_C = 25 °C
T_C = 125 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
150
± 20
25
16
50
63
30
45
107
35
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount ^c
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).
SYMBOL
R_thJA
R_thJC
LIMIT
50
1.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-2583-Rev. G, 02-Nov-15
1
Document Number: 68604
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000