SQD25N06-22L_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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SQD25N06-22L
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 10 V
R_DS(on) (Ω) at V_GS = 4.5 V
I_D (A)
Configuration
Package
60
0.022
0.033
25
Single
TO-252
FEATURES
• TrenchFET^® power MOSFET
• Package with low thermal resistance
• 100 % R_g and UIS tested
• AEC-Q101 qualified ^d
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-252
Drain connected to tab
D
G
S
D
G
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C ^a
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction) ^a
I_S
Pulsed Drain Current ^b
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation ^b
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
60
± 20
25
20
25
100
24
28
62
20
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount ^c
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
SYMBOL
R_thJA
R_thJC
LIMIT
50
2.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1873-Rev. D, 10-Aug-15
1
Document Number: 65360
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000