SQD10N30-330H_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive N-Channel 300 V (D-S) 175 °C MOSFET

www.vishay.com
SQD10N30-330H
Vishay Siliconix
Automotive N-Channel 300 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 10 V
I_D (A)
Configuration
TO-252
300
0.330
10
Single
D
FEATURES
• TrenchFET^® power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified ^d
• 100 % R_g tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Drain connected to tab
G
S
D
G
Top View
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
S
N-Channel MOSFET
TO-252
SQD10N30-330H-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) ^a
Pulsed Drain Current ^b
Single Pulse Avalanche Current ^e
Single Pulse Avalanche Energy ^e
Maximum Power Dissipation ^b
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
L = 0.05 mH
T_C = 25 °C
T_C = 125 °C
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
300
± 30
10
5
50
16
12.65
4
107
35
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. 1.5 kΩ resistance in series with the gate.
PCB Mount ^c
SYMBOL
R_thJA
R_thJC
LIMIT
50
1.4
UNIT
°C/W
S15-1136-Rev. C, 12-May-15
1
Document Number: 67070
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000