SQD100N03-3M4_15 Datasheet, PDF (1/10 Pages) Vishay Siliconix – Automotive N-Channel 30 V (D-S) 175 °C MOSFET

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SQD100N03-3m4
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 10 V
I_D (A)
Configuration
TO-252
30
0.0034
100
Single
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• AEC-Q101 Qualified^d
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D
GD
Drain Connected to Tab
S
Top View
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-252
SQD100N03-3m4-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Continuous Source Current (Diode Conduction)^a
Pulsed Drain Current^b
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation^b
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
30
± 20
100
87
100
160
58
168
136
45
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount^c
SYMBOL
R_thJA
R_thJC
LIMIT
50
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S12-2906-Rev. A, 10-Dec-12
1
Document Number: 62549
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000