SQ9945BEY_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

www.vishay.com
SQ9945BEY
Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 10 V
R_DS(on) (Ω) at V_GS = 4.5 V
I_D (A) per leg
Configuration
Package
60
0.064
0.082
6
Dual
SO-8
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SO-8 Dual
D₂
D₂ 5
D₁ 6
D₁ 7
8
D1
D2
G1
G2
4
3 G₂
2 S₂
1 G₁
S₁
Top View
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction) ^a
I_S
Pulsed Drain Current ^b
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation ^b
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
60
± 20
5.4
3.1
3.6
21.5
8.5
3.6
4
1.3
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount ^c
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
SYMBOL
R_thJA
R_thJF
LIMIT
112
38
UNIT
°C/W
S15-1873-Rev. D, 10-Aug-15
1
Document Number: 71504
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000