SQ7415EN Datasheet, PDF (1/9 Pages) Vishay Siliconix – Automotive P-Channel 60 V (D-S) 175 °C MOSFET

SQ7415EN
Vishay Siliconix
Automotive
P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 10 V
I_D (A)
Configuration
PowerPAK 1212-8
- 60
0.065
- 5.7
Single
S
FEATURES
• TrenchFET^® Power MOSFET
• Package with Low Thermal Resistance
AEC-Q101 RELIABILITY
• Passed all AEC-Q101 Reliability Testing
Pb-free
Available
RoHS*
COMPLIANT
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
PowerPAK 1212-8
SQ7415EN-T1-E3
SQ7415EN-T1
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^a
T_C = 25 °C
T_C = 70 °C
I_D
Continuous Source Current (Diode Conduction)^a
I_S
Pulsed Drain Current^b
I_DM
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
L = 0.1 mH
E_AS
I_AS
Maximum Power Dissipation^b
T_C = 25 °C
T_A = 70 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
- 60
± 20
- 3.6^a
- 2.9^a
- 1.3^a
- 30
-
-
1.5
0.8
- 55 to + 175
UNIT
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
PCB Mount^c
SYMBOL
R_thJA
R_thJC
LIMIT
81
2.4
UNIT
°C/W
Document Number: 74488
S-81558-Rev. B, 01-Jul-08
www.vishay.com
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