SQ7415AENW_15 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Automotive P-Channel 60 V (D-S) 175 °C MOSFET

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SQ7415AENW
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = -10 V
R_DS(on) (Ω) at V_GS = -4.5 V
I_D (A)
Configuration
Package
-60
0.065
0.090
-16
Single
PowerPAK 1212-8W
PowerPAK^® 1212-8W Single
D
D
D
6
D
7
8
5
FEATURES
• TrenchFET^® power MOSFET
• Low thermal resistance PowerPAK^® 1212-8W
package with 1.07 mm profile
• AEC-Q101 qualified
• Wettable flank terminals
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
G
3.3 _mm
1
Top View
3.3 ^mm
1
4
3
S
2
S
S
G
Bottom View
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)^a
Pulsed Drain Current ^b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation ^b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) ^d
T_C = 25 °C ^a
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
-60
± 20
-16
-11
-16
-64
-23
26
53
17
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount ^c
R_thJA
81
R_thJC
2.8
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
UNIT
°C/W
S15-2138, Rev. A, 14-Sep-15
1
Document Number: 76598
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000