SQ4946EY Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 60 V (D-S) MOSFET

SQ4946EY
Vishay Siliconix
Automotive
Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 10 V
I_D (A)
Configuration
SO-8
D1
60
0.055
4.5
Dual
D2
FEATURES
• TrenchFET^® Power MOSFET
• Package with Low Thermal Resistance
AEC-Q101 RELIABILITY
• Passed all AEC-Q101 Reliability Testing
• Characterization Ongoing
S₁ 1
8 D1
G₁ 2
7 D1
S₂ 3
6 D2
G1
G2
G₂ 4
5 D2
Top View
S1
N-Channel MOSFET
S2
N-Channel MOSFET
Pb-free
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
SO-8
SQ4946EY-T1-E3
SQ4946EY-T1
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^a
T_C = 25 °C
I_D
T_C = 70 °C
Continuous Source Current (Diode Conduction)^a
I_S
Pulsed Drain Current^b
I_DM
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
L = 0.1 mH
E_AS
I_AS
Maximum Power Dissipation^b
T_C = 25 °C
T_A = 70 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
60
± 20
4.5
3.8
2
30
7.2
12
2.4
1.7
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
PCB Mount^c
SYMBOL
R_thJA
R_thJC
LIMIT
62.5
-
UNIT
V
A
mJ
A
W
°C
UNIT
°C/W
Document Number: 74492
S-81560-Rev. C, 23-Oct-08
www.vishay.com
1