SQ4940AEY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Automotive Dual N-Channel 40 V (D-S) MOSFET

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SQ4940AEY
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 10 V
R_DS(on) () at V_GS = 4.5 V
I_D (A)
Configuration
SO-8 Dual
D₂
D₂ 5
D₁ 6
D₁ 7
8
40
0.024
0.029
8
Dual
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g and UIS tested
• AEC-Q101 qualified ^d
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D1
D2
4
3 G₂
2 S₂
1 G₁
S₁
Top View
G1
G2
S1
S2
N-Channel MOSFET N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4940AEY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current ^b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation ^b
Operating Junction and Storage Temperature Range
T_C = 25 °C ^a
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
40
± 20
8
5.3
3.6
32
17
15
4
1.3
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount ^c
SYMBOL
R_thJA
R_thJF
LIMIT
112
38
UNIT
°C/W
S14-0105-Rev. A, 20-Jan-14
1
Document Number: 62916
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000