SQ4917EY_15 Datasheet, PDF (1/12 Pages) Vishay Siliconix – Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET

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SQ4917EY
Vishay Siliconix
Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = -10 V
R_DS(on) (Ω) at V_GS = -4.5 V
I_D (A) per leg
Configuration
SO-8 Dual
D₂
D₂ 5
D₁ 6
D₁ 7
8
-60
0.0480
0.0612
-8
Dual
FEATURES
• TrenchFET^® power MOSFET
• AEC-Q101 qualified ^c
• 100 % R_g and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
S₁
S₂
G₁
G₂
4
3 G₂
2 S₂
1 G₁
S₁
Top View
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D₁
D₂
P-Channel MOSFET P-Channel MOSFET
SO-8
SQ4917EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
I_D
T_C = 125 °C
Continuous Source Current (Diode Conduction)
I_S
Pulsed Drain Current ^a
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I_AS
L = 0.1 mH
E_AS
Maximum Power Dissipation ^a
T_C = 25 °C
P_D
T_C = 125 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
-60
± 20
-8
-4.75
-4.5
-32
-22.4
25
5
1.67
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mount ^b
SYMBOL
R_thJA
R_thJF
LIMIT
110
30
UNIT
°C/W
S14-1010-Rev. B, 19-May-14
1
Document Number: 62785
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000