SQ4532EY Datasheet, PDF (1/15 Pages) Vishay Siliconix – Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET

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SQ4532EY
Vishay Siliconix
Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
V_DS (V)
R_DS(on) () at V_GS = ± 10 V
R_DS(on) () at V_GS = ± 4.5 V
I_D (A)
Configuration
30
- 30
0.055
0.070
0.100
0.190
5.6
- 5.3
N- and P-Pair
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• AEC-Q101 Qualified^c
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
D₁
S₂
8 ^D1
7 ^D1
6 ^D2 _G1
G₂
5 ^D2
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4532EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current^a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
30
- 30
± 20
5.6
- 5.3
3.2
-3
3
-3
22
- 21
10
-9
5
4
3.3
3.3
1.1
1.1
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PCB Mount^b
SYMBOL
R_thJA
R_thJF
N-CHANNEL
110
45
P-CHANNEL
105
45
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S11-2112-Rev. B, 07-Nov-11
1
Document Number: 67068
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000