SQ4532AEY_15 Datasheet, PDF (1/16 Pages) Vishay Siliconix – Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET

www.vishay.com
SQ4532AEY
Vishay Siliconix
Automotive N-and P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
V_DS (V)
R_DS(on) (Ω) at V_GS = ± 10 V
R_DS(on) (Ω) at V_GS = ± 4.5 V
I_D (A)
Configuration
30
-30
0.031
0.070
0.042
0.190
7.3
-5.3
N- and P-Pair
Package
SO-8
FEATURES
• TrenchFET^® power MOSFET
• AEC-Q101 qualified ^c
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SO-8 Dual
D₂
D₂ 5
D₁ 6
D₁ 7
8
D₁
S₂
G₂
G₁
4
3 G₂
2 S₂
1 G₁
S₁
Top View
Marking Code: Q4532A
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current ^a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation ^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
30
-30
± 20
7.3
-5.3
4.2
-3
4.2
-3
29
-21
10
-9
5
4
3.3
3.3
1.1
1.1
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PCB Mount ^b
SYMBOL
R_thJA
R_thJF
N-CHANNEL
110
45
P-CHANNEL
105
45
UNIT
°C/W
S15-1926-Rev. A, 17-Aug-15
1
Document Number: 62981
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000