SQ4483EY_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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SQ4483EY
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = -10 V
R_DS(on) (Ω) at V_GS = -4.5 V
I_D (A)
Configuration
Package
-30
0.0085
0.0200
-22
Single
SO-8
FEATURES
• TrenchFET^® power MOSFET
• AEC-Q101 qualified ^c
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SO-8 Single
D
D5
D6
D7
8
S
G
4
3G
2S
1S
S
Top View
P-Channel
D
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current ^a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation ^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
-30
± 20
-30
-30
-30
-84
-32
51
7
2
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PCB Mount ^b
SYMBOL
R_thJA
R_thJF
LIMIT
85
21
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1806-Rev. A, 10-Aug-15
1
Document Number: 74794
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000