SQ4005EY_15 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Automotive P-Channel 12 V (D-S) 175 °C MOSFET

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SQ4005EY
Vishay Siliconix
Automotive P-Channel 12 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = -4.5 V
R_DS(on) (Ω) at V_GS = -2.5 V
I_D (A)
Configuration
Package
SO-8 Single
D
D5
D6
D7
8
-12
0.016
0.022
-15
Single
SO-8
FEATURES
• TrenchFET^® power MOSFET
• AEC-Q101 qualified ^d
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
G
Marking Code: Q4005
4
3G
2S
1S
S
Top View
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
Continuous Source Current (Diode Conduction) ^a
Pulsed Drain Current ^b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation ^b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T_C = 25 °C
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
-12
±8
-15
-8.7
-5.4
-60
-20
20
6
2
-55 to +175
260
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing
PCB Mount ^c
SYMBOL
R_thJA
R_thJF
LIMIT
92
25
UNIT
V
A
mJ
W
°C
UNIT
°C/W
SPending-Rev. A, 12-Oct-15
1
Document Number: 64454
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000