SQ3989EV Datasheet, PDF (1/6 Pages) Vishay Siliconix – Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET

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SQ3989EV
Vishay Siliconix
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET
TSOP-6 Dual
D₂
S₁
4
D₁
5
6
3
2
G₂
1
S₂
G₁
Top View
Ordering Information:
Si3989EV-T1-GE3 (lead (Pb)-free and halogen-free)
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = -10 V
R_DS(on) () at V_GS = -4.5 V
I_D (A)
Configuration
Package
-30
-0.155
-0.300
-2.32
Dual
TSOP-6
FEATURES
• TrenchFET^® power MOSFET
• AEC-Q101 qualified
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D₁
S₂
G₁
G₂
S₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C) ^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) ^a
Maximum Power Dissipation ^a
Unclamped Inductive Surge UIS
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
I_AV
T_J, T_stg
LIMIT
-30
± 20
-2.5
-1.5
-10.2
-2.1
1.67
0.56
7
-55 to +175
UNIT
V
A
W
A
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient ^a
Maximum Junction-to-Foot (Drain)
Note
a. Surface mounted on 1" x 1" FR4 board.
Steady State
Steady State
SYMBOL
R_thJA
R_thJF
LIMIT
150
90
UNIT
°C/W
S16-1694-Rev. B, 29-Aug-16
1
Document Number: 75059
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000