SQ3418EV_15 Datasheet, PDF (1/12 Pages) Vishay Siliconix – Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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SQ3418EV
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 10 V
R_DS(on) (Ω) at V_GS = 4.5 V
I_D (A)
Configuration
Package
TSOP-6 Single
S
4
D
5
D
6
40
0.032
0.042
8
Single
TSOP-6
(1, 2, 5, 6) D
FEATURES
• TrenchFET^® power MOSFET
• AEC-Q101 qualified ^d
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
(3) G
3
G
2
D
1
D
Top View
Marking Code: 8P
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
T_C = 25 °C ^a
T_C = 125 °C
Pulsed Drain Current ^b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation ^b
T_C = 25 °C
T_C = 125 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
40
± 20
8
5
6
32
13.5
9.1
5
1.6
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PCB Mount ^c
SYMBOL
R_thJA
R_thJF
LIMIT
110
30
UNIT
°C/W
S15-1989-Rev. A, 24-Aug-15
1
Document Number: 63412
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000