SQ3410EV Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive N-Channel 30 V (D-S) 175 °C MOSFET

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SQ3410EV
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 10 V
R_DS(on) () at V_GS = 4.5 V
I_D (A)
Configuration
30
0.0175
0.0213
8
Single
FEATURES
• TrenchFET^® Power MOSFET
• AEC-Q101 Qualified^d
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TSOP-6
Top V iew
(1, 2, 5, 6) D
3 mm
1
6
2
5
(3) G
3
4
2.85 mm
Marking Code: 8Gxxx
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
(4) S
N-Channel MOSFET
TSOP-6
SQ3410EV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C^a
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)
I_S
Pulsed Drain Current^b
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^b
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
30
± 20
8
6.8
6.3
32
22
24
5
1.6
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount^c
SYMBOL
R_thJA
R_thJF
LIMIT
110
30
UNIT
°C/W
S12-1169-Rev. A, 28-May-12
1
Document Number: 67342
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000