SQ2389ES Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive P-Channel 40 V (D-S) 175 °C MOSFET

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SQ2389ES
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = -10 V
R_DS(on) (Ω) at V_GS = -4.5 V
I_D (A)
Configuration
-40
0.094
0.188
-4.1
Single
FEATURES
• TrenchFET^® power MOSFET
• AEC-Q101 qualified
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SOT-23 (TO-236)
D
3
S
G
2
S
1
G
Top View
Marking Code: 9Axxx
P-Channel MOSFET
D
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SOT-23
SQ2389ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
I_D
T_C = 125 °C
Continuous Source Current (Diode Conduction)
I_S
Pulsed Drain Current ^a
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I_AS
L = 0.1 mH
E_AS
Maximum Power Dissipation ^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
P_D
T_J, T_stg
LIMIT
-40
± 20
-4.1
-2.4
-3.6
-16
-12
7.2
3
1
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB Mount ^b
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
SYMBOL
R_thJA
R_thJF
LIMIT
166
50
UNIT
°C/W
S15-0166-Rev. A, 02-Feb-15
1
Document Number: 63248
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000