SQ2362ES_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive N-Channel 60 V (D-S) 175 °C MOSFET

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SQ2362ES
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 10 V
R_DS(on) (Ω) at V_GS = 4.5 V
I_D (A)
Configuration
Package
SOT-23 (TO-236)
60
0.068
0.075
4.3
Single
SOT-23
D
FEATURES
• TrenchFET^® power MOSFET
• AEC-Q101 qualified
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
3
G
2
S
1
G
Top View
Marking Code: 8Z
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current ^a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation ^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
60
± 20
4.3
2.5
3.8
17
12
7
3
1
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB Mount ^b
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
SYMBOL
R_thJA
R_thJF
LIMIT
166
50
UNIT
°C/W
S15-1820-Rev. A, 10-Aug-15
1
Document Number: 62913
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000