SQ2337ES_15 Datasheet, PDF (1/10 Pages) Vishay Siliconix – Automotive P-Channel 80 V (D-S) 175 °C MOSFET

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SQ2337ES
Vishay Siliconix
Automotive P-Channel 80 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = - 10 V
R_DS(on) () at V_GS = - 6 V
I_D (A)
TO-236
(SOT-23)
- 80
0.290
0.314
- 2.2
S
FEATURES
• TrenchFET^® Power MOSFET
• AEC-Q101 Qualified^c
• 100 % R_g and UIS Tested
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912
G1
S2
G
3D
Top View
SQ2337ES
Marking Code: 8Qxxx
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D
P-Channel MOSFET
SOT-23
SQ2337ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)
I_S
Pulsed Drain Current^a
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
- 80
± 20
- 2.2
- 1.3
- 3.7
-9
- 11
6
3
1
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mount^b
SYMBOL
R_thJA
R_thJF
LIMIT
166
50
UNIT
°C/W
S13-1184-Rev. B, 20-May-13
1
Document Number: 66717
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000