SQ2310ES_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive N-Channel 20 V (D-S) 175 °C MOSFET

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SQ2310ES
Vishay Siliconix
Automotive N-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 4.5 V
R_DS(on) () at V_GS = 2.5 V
R_DS(on) () at V_GS = 1.5 V
I_D (A)
Configuration
TO-236
(SOT-23)
20
0.030
0.034
0.042
6
Single
D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• AEC-Q101 Qualified^c
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
G1
3D
G
S2
Top View
SQ2310ES*
* Marking Code: 8Txxx
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SOT-23
SQ2310ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)
I_S
Pulsed Drain Current^a
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
20
±8
6
3.5
2.5
24
10
5
2
0.6
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mount^b
SYMBOL
R_thJA
R_thJF
LIMIT
175
75
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S11-2111-Rev. B, 07-Nov-11
1
Document Number: 67036
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000