SQ1902AEL_15 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET

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SQ1902AEL
Vishay Siliconix
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 4.5 V
R_DS(on) (Ω) at V_GS = 2.5 V
I_D (A)
Configuration
Package
20
0.415
0.600
0.78
Dual
SC-70
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g and UIS tested
• AEC-Q101 qualified ^c
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SOT-363
SC-70 Dual (6 leads)
S₂
G₂
4
D₁
5
6
Marking Code: 9P
3
2
D₂
1
G₁
S₁
Top View
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
T_C = 25 °C
T_C = 125 °C
Pulsed Drain Current ^a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation ^a
T_C = 25 °C
T_C = 125 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
20
± 12
0.78
0.45
0.54
3
3.5
0.6
0.43
0.14
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PCB Mount ^b
SYMBOL
R_thJA
R_thJF
LIMIT
460
350
UNIT
°C/W
S15-1917-Rev. A, 17-Aug-15
1
Document Number: 62977
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000