SQ1563AEH_15 Datasheet, PDF (1/16 Pages) Vishay Siliconix – N-and P-Channel 20 V (D-S) 175 °C MOSFET

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SQ1563AEH
Vishay Siliconix
N-and P-Channel 20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
V_DS (V)
R_DS(on) (Ω) at V_GS = ± 4.5 V
R_DS(on) (Ω) at V_GS = ± 2.5 V
R_DS(on) (Ω) at V_GS = ± 1.8 V
I_D (A)
Configuration
20
-20
0.280
0.490
0.360
0.750
0.450
1.100
0.85
-0.85
N & P Pair
Package
SC-70
SOT-363
SC-70 Dual (6 leads)
S₂
G₂
4
D₁
5
6
FEATURES
• TrenchFET^® power MOSFET
• 100 % R_g and UIS tested
• AEC-Q101 qualified ^c
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D₁
S₂
G₂
G₁
Marking Code: 9Q
3
2
D₂
1
G₁
S₁
Top View
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current ^a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation ^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
20
-20
±8
0.85
-0.85
0.85
-0.79
0.85
-0.85
3.3
-3.3
3.5
-1.4
0.6
0.1
1.5
1.5
0.5
0.5
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
PCB mount ^b
SYMBOL
R_thJA
R_thJF
N-CHANNEL
220
100
P-CHANNEL
220
100
UNIT
°C/W
S15-2107-Rev. A, 07-Sep-15
1
Document Number: 62986
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000