SMMB912DK Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual N-Channel 20 V (D-S) MOSFET

New Product
SMMB912DK
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 4.5 V
R_DS(on) (Ω) at V_GS = 2.5 V
R_DS(on) (Ω) at V_GS = 1.8 V
I_D (A)^a
Configuration
20
0.216
0.268
0.375
1.5
Dual
PowerPAK SC75-6L-Dual
D₁
D₂
1
S1
D1
D1
6
G2
5
1.60 mm S₂
4
2
G1
D2
3
D2
1.60 mm
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
Marking Code
Part # code
MBX
XXX
Lot Traceability
and Date code
FEATURES
• High Quality Manufacturing Process Using SMM
Process Flow
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• New Thermally Enhanced PowerPAK^® SC-75
Package
- Small Footprint Area
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
• Find out more about Vishay’s Medical Products at:
www.vishay.com/medical-mosfets
APPLICATION EXAMPLES
• Medical Implantable Applications Including
- Drug Delivery Systems
- Defibrillators
- Pacemakers
- Hearing Aids
- Other Implantable Devices
• Load Switch, PA Switch and Battery Switch for Portable
Devices
• DC/DC Converter
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SC-75
SMMB912DK-T1-GE3
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
V_GS
T_C = 25 °C^a
T_C = 70 °C^a
T_A = 25 °C^{b, c}
I_D
T_A = 70 °C^{b, c}
Pulsed Drain Current
Continuous Source-Drain Diode Current
I_DM
T_C = 25 °C^a
T_A = 25 °C^{b, c}
I_S
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C^{b, c}
P_D
T_A = 70 °C^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{c, d}
T_J, T_stg
LIMIT
20
±8
1.5
1.5
1.5
1.4
5
1.5
0.9
3.1
2.0
1.1
0.7
- 55 to + 150
260
UNIT
V
A
W
°C
Document Number: 65459
S09-2018-Rev. A, 05-Oct-09
www.vishay.com
1