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SMMA511DJ Datasheet, PDF (1/14 Pages) Vishay Siliconix – N- and P-Channel 12 V (D-S) MOSFET
New Product
SMMA511DJ
Vishay Siliconix
N- and P-Channel 12 V (D-S) MOSFET
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
VDS (V)
RDS(on) (Ω) at VGS = ± 4.5 V
RDS(on) (Ω) at VGS = ± 2.5 V
RDS(on) (Ω) at VGS = ± 1.8 V
ID (A)a
Configuration
12
- 12
0.040
0.070
0.048
0.100
0.063
0.140
4.5
- 4.5
N- and P-Pair
PowerPAK SC-70-6 Dual
D1
S2
1
S1
D1
D1
6
G2
5
2.05 mm S2
4
2
G1
D2
3
D2
2.05 mm
G2
G1
S1
D2
N-Channel MOSFET P-Channel MOSFET
Marking Code
Part # code
MAX
XXX
Lot Traceability
and Date code
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
FEATURES
• High Quality Manufacturing Process Using SMM
Process Flow
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Compliant to RoHS Directive 2002/95/EC
• Find out more about Vishay’s Medical Products at:
www.vishay.com/medical-mosfets
APPLICATION EXAMPLES
• Medical Implantable Applications Including
- Drug Delivery Systems
- Defibrillators
- Pacemakers
- Hearing Aids
- Other Implantable Devices
• Load Switch for Portable Devices
PowerPAK SC-70
SMMA511DJ-T1-GE3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
VDS
12
- 12
Gate-Source Voltage
VGS
±8
TC = 25 °Ca
4.5
Continuous Drain Current (TJ = 150 °C)
TC = 70 °Ca
TA = 25 °Ca, b, c
ID
4.5
4.5
TA = 70 °Ca, b, c
4.5
±8
- 4.5
- 4.5
- 4.3
- 3.4
Pulsed Drain Current
IDM
20
Continuous Source-Drain Diode Current
TC = 25 °C a
TA = 25 °Cb, c
IS
4.5
1.6
- 10
- 4.5
- 1.6
TC = 25 °C
6.5
6.5
Maximum Power Dissipation
TC = 70 °C
TA = 25 °Ca, c
PD
5
1.9
5
1.9
TA = 70 °Ca, c
1.2
1.2
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to + 150
260
UNIT
V
A
W
°C
Document Number: 65281
S09-2019-Rev. B, 05-Oct-09
www.vishay.com
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