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SMBJ50CA-E3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Surface Mount TRANSZORB Transient Voltage Suppressors
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SMBJ5.0A thru SMBJ188CA
Vishay General Semiconductor
Surface Mount TRANSZORB®
Transient Voltage Suppressors
DO-214AA (SMB J-Bend)
PRIMARY CHARACTERISTICS
VBR (bi-directional)
VBR (uni-directional)
VWM
PPPM
IFSM (uni-directional only)
TJ max.
Polarity
6.4 V to 231 V
6.4 V to 231 V
5.0 V to 188 V
600 W
100 A
150 °C
Uni-directional, bi-directional
Package
DO-214AA (SMBJ)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional use CA suffix (e.g. SMBJ10CA).
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
PPPM (1)(2)
IPPM (1)
IFSM (2)
TJ, TSTG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Revision: 29-May-13
1
Document Number: 89284
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000