SMBJ3V3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Surface Mount TRANSZORB® Transient Voltage Suppressors

SMBJ3V3
New Product _{Vishay General Semiconductor}
Surface Mount TRANSZORB^® Transient Voltage Suppressors
DO-214AA (SMBJ)
MAJOR RATINGS AND CHARACTERISTICS
V_(BR)
P_PPM
I_FSM
T_j max.
3.3 V
600 W
60 A
175 °C
FEATURES
• Unidirectional polarity only
• Peak pulse power: 600 W (10/1000 µs)
• Excellent clamping capability
• Very fast response time
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
specifically for protecting 3.3 V supplied sensitive
equipment against transient overvoltages.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation ^(1,2)
Peak pulse current with a 10/1000 μs waveform (see Fig. 1)
Peak pulse current with a 8/20 waveform (see Fig. 1)
Non repetitive peak forward surge current 8.3 ms single half sine-wave⁽²⁾
Power dissipation on infinite heatsink, T_L = 75 °C
Operating junction and storage temperature range
Note:
(1) Non-repetitive current pulse, per Fig. 1
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
P_PPM
I_PPM
I_PPM
I_FSM
P_M(AV)
T_J, T_STG
VALUE
600
50
200
60
5
- 65 to + 175
UNIT
W
A
A
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V_(BR) AT I_T
MIN
MAXIMUM
REVERSE
LEAKAGE
CURRENT
I_R AT V_WM
MAX
MAXIMUM
CLAMPING
VOLTAGE
V_C AT I_PPM
10/1000 µs
MAXIMUM
CLAMPING
VOLTAGE
V_C AT I_PPM
8/20 µs
V
mA
µA
V
V
A
V
A
SMBJ3V3
KC
4.1
1.0
200
3.3
7.3
50
10.3 200
TYPICAL
TEMP.
COEFFICIENT
OF V_(BR)
TYPICAL
JUNCTION
CAPACITANCE
C_J AT 0 V,
(%/°C)
- 5.3
1 MHz
pF
5200
Document Number 88940
08-Sep-06
www.vishay.com
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