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SMB30A300 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Asymmetric Transient Voltage Suppressor
SMB30A300
Vishay General Semiconductor
New Product
Asymmetric Transient Voltage Suppressor
DO-214AA (SMB)
30 V
300 V
PRIMARY CHARACTERISTICS
IPPM
VC
VBR at TVS
VBR at Diode
TJ max.
14.5 A
41.4 V
30 V
300 V
150 °C
FEATURES
• Glass passivated chip junction
• Ideal for automated placement
• Very fast response time
• Low incremental surge resistance, excellent
clamping capability
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in wiper motor application, to replace varistor.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes TVS 30 V cathode end,
the cathode of 300 V is at the other terminal side
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse current with a 10/1000 µs waveform per (Fig. 1)
Maximum reverse current of 30 V TVS side at VWM = 25.6 V (1)(2)
Maximum reverse current of 300 V diode side at VWM = 243 V (1)(2)
Operating junction and storage temperature range
Notes:
(1) All terms and symbols are consistant with ANSI/IEEE C62.35
(2) VWM means stand-off voltage
SYMBOL
IPPM
ID
ID
TJ, TSTG
VALUE
14.5
5.0
1.0
- 55 to + 150
UNIT
A
µA
µA
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE
MARKING
CODE
BREAKDOWN VOLTAGE
VBR
AT IT (1) (V)
MIN
MAX
TEST
CURRENT
IT (mA)
TYPICAL
JUNCTION
CAPACITANCE AT
4.0 V, 1 MHz
CJ (pF)
MAXIMUM PEAK
PULSE SURGE
CURRENT IPPM (2)
(A)
SMB30A300
30F
30 V TVS
28.5
31.5
1.0
130
14.5
300 V Diode
270
360
1.0
72
-
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 1
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM VC (V)
41.4
-
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Document Number: 88476
Revision: 03-Aug-07