SM8S15-E3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Surface Mount PAR Transient Voltage Suppressors

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SM8S10 thru SM8S43A
Vishay General Semiconductor
Surface Mount PAR^® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
DO-218AB
PRIMARY CHARACTERISTICS
V_WM
P_PPM (10 x 1000 μs)
P_PPM (10 x 10 000 μs)
P_D
I_FSM
T_J max.
10 V to 43 V
6600 W
5200 W
8W
700 A
175 °C
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T_J = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with 10/1000 μs waveform
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at T_C = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1) _{Non-repetitive current pulse derated above TA = 25 °C}
SYMBOL
P_PPM
P_D
I_PPM ⁽¹⁾
I_FSM
T_J, T_STG
VALUE
6600
5200
8.0
See next table
700
- 55 to + 175
UNIT
W
W
A
A
°C
Revision: 14-Sep-11
1
Document Number: 88387
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