SM6T68A-E3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Surface Mount TRANSZORB Transient Voltage Suppressors

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SM6T Series
Vishay General Semiconductor
Surface Mount TRANSZORB^®
Transient Voltage Suppressors
DO-214AA (SMBJ)
PRIMARY CHARACTERISTICS
V_WM
5.80 V to 188 V
V_BR uni-directional
6.8 V to 220 V
V_BR bi-directional
P_PPM
6.8 V to 220 V
600 W
P_D
5.0 W
I_FSM (uni-directional only)
T_J max.
100 A
150 °C
Polarity
Uni-directional, bi-directional
Package
DO-214AA (SMBJ)
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SM6T12CA).
Electrical characteristics apply in both directions.
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾ (fig. 1)
Peak pulse current with a 10/1000 μs waveform ⁽¹⁾ (fig. 3)
Power dissipation on infinite heatsink at T_A = 50 °C
Peak forward surge current 10 ms single half sine-wave uni-directional only ⁽²⁾
Operating junction and storage temperature range
Notes
(1) _{Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.}
(2) _{Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal}
SYMBOL
P_PPM
I_PPM
P_D
I_FSM
T_J, T_STG
VALUE
600
See next table
5.0
100
- 65 to + 150
UNIT
W
A
W
A
°C
Revision: 13-Dec-13
1
Document Number: 88385
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